205th Meeting of The Electrochemical Society
May 9-May 14, 2004
PROGRAM INFORMATION
D1 - Plasma Processing XV
Dielectric Science and Technology/Electrodeposition/Electronics
Tuesday, May 11, 2004
Conference Room 8, Level 3
Plasma Deposition and Etching
Co-Chairs: G.S. Mathad and Y. Kuo
| Time | Abs# | Title |
|---|
| 09:00 | 133 |
High-Density PECVD processing of Gate Insulator for High Performance TFTs - P. Joshi, A. Voutsas, and J. Hartzell (SHARP Laboratories of America, Inc.) |
| 09:20 | 134 |
A Thermally Stable, k<2.5 Carbon-Doped Oxide Film Deposited by a Plasma-Enhanced CVD Process - A. Demos, L. D'Cruz, F. Schmitt, Y. Zheng, H. Armer, and H. M'Saad (Applied Materials) |
| 09:40 | |
Twenty-Minute Intermission |
| 10:00 | 135 |
Plasma Enhanced Deposition of Carbon for Hardmask Applications - M. Vogt, M. Kirchhoff, M. Stavrev, and S. Wege (Infineon Technologies Dresden GmbH and Co. OHG) |
| 10:20 | 136 |
Design and Modeling of a New Inductively-Coupled Plasma Source for Semiconductor Wafer Processing - D.-H. Lee, Y.K. Oh, and N.H. Kim (Adaptive Plasma Technology Corporation) |
| 10:40 | 137 |
Screening Experiments for Dielectric Etches of Damascene Trench Structures with Deep Sub-100nm Critical Dimensions - M. Engelhardt and G. Steinlesberger (Infineon Technologies, Corporate Research) |
| 11:00 | 138 |
Line Edge Roughness Investigations for Dielectric Etches with 193nm Lithography - S. Machill, L. Volkel, T. Marschner, and S. Wege (Infineon Technologies SC300 GmbH and Co. KG) |
| 11:20 | 139 |
A Photoresist Etch Back Process for Deep Trench Capacitor Applications - H. Goto, T. Uk (Novellus Systems, Inc.), and S. Kundalgurki (Infineon Technologies Dresden Gmbh and Co. OHG) |
| 11:40 | 140 |
Interaction of a Variety of Ashing Plasma with MSQ Low-k Dielectric - Q.T. Le (IMEC), M. Patz (JSR Corporation), H. Struyf, M. Baklanov, W. Boullart, S. Vanhaelemeersch (IMEC), and K. Maex (Katholieke Universitiet Leuven) |
Plasma Etching Processes
Co-Chairs: D.W. Hess and M. Engelhardt
|