Toronto, Ontario, Canada, May 12-16, 2013, The Sheraton Centre Toronto Hotel
Meeting Program
The ECS Lecture
Michael Mayberry
The Frontier of Electronics Research
Awards
ECS Transactions
Call for Papers
Technical Program
Meeting Highlights
The 223rd ECS Meeting was the ninth time ECS held one of its biannual meeting in Toronto, and the “tradition” of meeting in this great city started in 1911. Meeting attendees had the opportunity to not only choose from over 1,500 presentations in 44 symposia; but to sample some of the city’s renowned offerings: a wide variety of restaurants, one of the largest zoos in the world, and the great public art on display in the streets. From the meeting program to the Annual Society Business Meeting to the Board of Directors meeting, participants saw evidence of the meeting’s many “green” initiatives. The meeting app continues to improve, enabling attendees to look at a meeting abstract right on their mobile devices, and also eliminating the need to use (and throw away!) so much paper. The ECS Lecture, during the Monday plenary session, was given by Michael Mayberry of Intel Corporation to a packed audience.
After Dr. Mayberry was introduced by ECS 2nd Vice-President Paul Kohl, the speaker began his fast-moving and informative lecture. He began by noting that technology was poised at the 22 nm node. Thus, about 7500 transistors are packed into a region of space the dimension of a dot on the letter “i”! The challenge now is to follow the progression dictated by Moore’s law in terms of the number of devices that can be packed together in any given surface area. This inevitably means building complex 3-dimensional structures. The speaker turned to a discussion of quantum well field effect transistors built from Group III-V semiconductors and new-generation devices based on silicon nanowires. He concluded by summarizing the key developments needed in areas such as metrology and characterization to further advance manufacturing processes.
The Gordon E. Moore Award Lecture entitled, “Wide Bandgap Semiconductors for Sensing Applications,” was given by Fan Ren on Monday afternoon.
After being introduced to the audience by the ECS President Fernando Garzon, Dr. Ren began his award lecture acknowledging his collaborator and nominator, Steve Pearton. The lecture focused on the development of AlGaN/GaN junction-based transistors (HEMTs) for gas and bio-sensing applications.
At the ECS meetings, there are many opportunities to meet fellow scientists and engineers; but there are also ways to engage with the Society’s institutional members, including at the popular technical exhibit and mixer events. Organizations are also involved with ECS through the institutional membership program that began almost 70 years ago. At the plenary session on Monday, ECS was able to thank two of these members with Leadership Circle Awards: both Permascand AB and Evonik Litarion GmbH reached the Silver Level Leadership Circle Award for 10 years of Institutional Membership with ECS.
In addition to its very active Divisions, ECS is proud to have dynamic Sections throughout the world. Like the Divisions, the Sections also have a strong awards program, and typically these awards are presented during the Section’s own meetings. In Toronto, the Europe Section changed their normal schedule and presented the Alessandro Volta Medal to Jean-Noël Chazalviel from CNRS in Paris.
The Society’s mission to advance electrochemistry and solid state science is supported by a strong publications program. The Society’s publications have been experiencing continuous growth in submissions, which demands an enormous amount of work from our editors. In Toronto, two members of the editorial team were thanked for serving the Society’s publications so well, including Andrew A. Gewirth for his work as a Technical Editor for the Society’s journals, and John Weidner for serving as Editor of ECS Transactions.
