243rd ECS Meeting Topic Close-up: H02 – Advanced CMOS-Compatible Semiconductor Devices 20

Symposium focus: This symposium focuses on studies of new devices, circuits, and applications for Moore and More-than-Moore technology, including SOI devices, advanced Bulk MOSFETs, scaled devices, Multi-gate devices (FinFET, triple gate, nanowire, nanosheet), Junctionless FET, High-power devices, semiconductor Sensors/Biosensors, Tunnel-FET, memory devices, III-V devices, 2D devices, and others.

Invited/Keynote speakers in alphabetic order by first name include:

• Bernardette Kunert, Imec
• Bogdan Cretu, École nationale supérieure d’ingénieurs de Caen
• Cor Claeys, Katholieke Universiteit Leuven – Keynote Speaker
• Cristell Maneux, Université de Bordeaux
• Jose Alexandre Diniz, Universidade Estadual de Campinas
• Koen Martens, Imec
• Mathieu Luisier, Eidgenössische Technische Hochschule Zürich
• Mikael Cassé, CEA-Leti
• Rüdiger Quay, Fraunhofer-Institut für Angewandte Festkörperphysik
• Salvador Gimenez, Centro Universitário da FEI
• Theresia Knobloch, Institute for Microelectronics, Technische Universität Wien
• Toshihiko Noda, Toyohashi University of Technology
• Vihar Georgiev, University of Glasgow
• Yasuhisa Omura, Kansai University

Consult the Call for Papers for more information.