Be sure to read Prof. Rashmi Jha’s article, “Emerging Memory Devices Beyond Conventional Data Storage: Paving the Path for Energy-Efficient Brain-Inspired Computing,” in the spring 2023 issue of The Electrochemical Society Interface.
The article aims to address “limitations of the memory bandwidth of machine learning and artificial intelligence algorithms, and the necessity of novel computing architectures to overcome this limitation” (Jha, 2023).
Rashmi Jha is Professor of Electrical Engineering and Computer Science at the University of Cincinnati (UC). Her research interests are in artificial intelligence; low-power neuromorphic systems; CMOS and other emerging logic and memory devices; on-die sensors; cross-technology heterogenous integration and modeling; cybersecurity with an emphasis on hardware security; additive, flexible, and wearable electronics; nanoelectronics; neuroscience and neuroelectronics; and bio-inspired computing and systems.
After completing a BTech at the Indian Institute of Technology, Professor Jha received her MS and PhD in Electrical Engineering from North Carolina State University. She worked as a Process Integration Engineer for 45 nm/32 nm High-k/Metal Gates based Advanced CMOS technology at the IBM Semiconductor Research and Development Center from 2006-2008. Prof. Jha was appointed Assistant Professor and then Associate Professor in Electrical Engineering and Computer Science at the University of Toledo from 2008 to 2015. Joining UC as Associate Professor in 2015, she was named Professor of Electrical Engineering and Computer Science there in 2020.
Prof. Jha has been granted 13 U.S. patents and authored/co-authored over 106 peer-reviewed publications. She received a 2017 AFOSR Summer Faculty Fellowship Award; 2013 CAREER Award from the National Science Foundation; 2012 IBM Faculty Award; 2007 IBM Invention Achievement Award; 2006 Materials Research Society’s Graduate Student Award; 2005-2006 Applied Materials Fellowship Award; and best student paper award nomination in the 2005 IEEE International Electron Devices Meeting.