236th ECS Meeting Topic Close-up: Materials and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and High Density Interconnection PCB 2

Register today!

Topic Close-up #6

Symposium G06: Materials and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and  Interconnection PCB 2

Symposium focus: This symposium focuses on issues pertinent to advances in semiconductor interconnects beyond the 20 nm technology node as well as novel materials and integration methods for 2.5D and 3D interconnects. Damascene interconnects using copper or cobalt, introduced at the 10-20 nm node, are expected to be used for the foreseeable future. The 2.5D or 3D concept replaces long 2D interconnects with shorter vertical interconnects, which have the potential to alleviate the interconnect delay. Since electrochemical processes are the ultimate solution to create smaller size and lower cost devices, both practical and fundamental aspects of electrochemical processes are of high interest. This symposium will bring researchers together to discuss various aspects of device design and architecture, novel materials, chemical formulation, packaging approaches, and nano-scale fabrication methodologies.

Invited speakers: More than 10 invited talks from industries and academia are planned, as well as many active discussions from contributed speakers.


For additional information on this topic close-up and more, check out the full call for papers with all the 236th ECS Meeting topics being held in Atlanta, GA on October 13-17, 2019.

DISCLAIMER

All content provided in the ECS blog is for informational purposes only. The opinions and interests expressed here do not necessarily represent ECS's positions or views. ECS makes no representation or warranties about this blog or the accuracy or reliability of the blog. In addition, a link to an outside blog or website does not mean that ECS endorses that blog or website or has responsibility for its content or use.