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The 236th ECS Meeting is just around the corner. With five days of technical programing including 2,400 abstracts in 52 symposia, the meeting is sure to have something of interest for everyone. In addition to the technical program, check out some of the other exciting events we have planned.

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Call for Student Volunteers

Apply today to serve as a student volunteer at the 236th ECS Meeting in Atlanta, GA. Volunteers receive 50% off their meeting registration, a student mixer ticket, a complimentary student membership for one year, and a volunteer t-shirt too!

As a student volunteer, you will work closely with the ECS staff and meet your fellow ECS members and meeting attendees.

Take advantage of this unique opportunity to network and engage with meeting attendees, symposium organizers, and ECS staff! Multilingual speakers are highly encouraged to apply! (more…)

Submission Deadline: October 23, 2019

Submit your manuscripts to the Journal of The Electrochemical Society Focus Issue on Heterogeneous Functional Materials for Energy Conversion and Storage.

About the focus issue

This special issue focuses on Heterogeneous Functional Materials (HeteroFoaMs), which are pervasive in electrochemical devices. These devices consist of multiple materials combined at multiple scales (from atomic to macro) that actively interact during their functional history in a manner that controls their collective performance as a system at the global level. The principal motivation for this special issue will be to provide a forum to discuss the science that controls emergent properties in heterogeneous functional materials as a foundation for design of functional material devices with performance not bounded by constituent properties.

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Top 6 reasons to attend the 236th ECS Meeting:

 

1. Technical Program: Our large technical program of over 2,400 talks in 52 symposia, along with countless division, social, and networking events across 5 days!

2. Networking: No social media platform or digital introduction will ever have an advantage over being in the same location as 2,400 of your colleagues.

3. Educational Opportunities: From all-day short courses to professional development appointments, ECS is sure to have something to offer you. (more…)

Posted in Meetings

ECS seeks publications specialist/Interface production editor

 

Reports to: Director of Publications
Classification: Full Time Exempt

MAJOR FUNCTION
Responsible for the production and dissemination of Interface consistent with ECS goals, objectives, and policies. Provides assistance in the management of ECS publications by performing various duties related to journals/ECST production and data collection and analysis, specifically with respect to publications usage statistics. (more…)

Submission Deadline: September 30, 2019

Submit your manuscripts to the Journal of The Electrochemical Society Focus Issue on Mathematical Modeling of Electrochemical Systems at Multiple Scales in Honor of Richard Alkire.

About the focus issue

This focus issue of the Journal of The Electrochemical Society is devoted to the mathematical modeling of electrochemical systems across multiple scales. Advances in electrochemical systems will be greatly influenced by the use of advanced simulation tools for the design and control of materials and processes. The figure below illustrates some of the computational methods that have been developed to deal with phenomena at different time and length scales, ranging from atomic to macro, in order to compute properties and model phenomena. This issue is inspired by the work of Professor Richard Alkire from the University of Illinois-Urbana Champaign, who has been a pioneer in the multiscale modeling of electrochemical systems. In addition, Professor Alkire has led the community in establishing a vision for such work and has trained and influenced countless researchers on this topic over the years. The issue will be dedicated to him in recognition of his contributions to this field. (more…)

ECS Montréal with IMCS 2020 abstract submission is open

Join us as the 237th ECS Meeting and the 18th International Meeting on Chemical Sensors (IMCS 2020) comes to the Palais des Congres de Montréal in Montréal, Canada from May 10-14, 2020. This is a can’t miss event for electrochemists and solid state scientists, featuring over 50 symposia in the following areas:

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Dr. Kang Xu

Dr. Kang Xu

ECS’s San Francisco Section is proud to hold its third section meeting of 2019 with invited guest speaker Kang Xu, who will present his talk:

Before Li-Ion Batteries, and Thereafter…

Kang Xu
Electrochemistry Branch, U. S. Army Research Laboratory,
Adelphi, Maryland, 20783, USA

When: Tuesday, July 30th, 2019
Time: 6:00 P.M.
Where: Le Bateau Ivre
2629 Telegraph Ave, Berkeley, CA 94704

Free participation, $40 flat fee for dinner

Plan to attend? RSVP: sfsectionecs@gmail.com 

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Target experts in your field through a symposium sponsorship!


Book your sponsorship by Friday, August 2

By sponsoring a symposium at the 236th ECS Meeting, October 13-17, 2019 in Atlanta, GA, you will be directly supporting the scientists and engineers who make the meeting possible. Sponsorships offset travel expenses, registration fees, complimentary proceedings, and/or host receptions for invited speakers, researchers, and students. Symposium sponsorships offer a unique opportunity to highlight your brand to a targeted audience at ECS. (more…)

Submission Deadline: July 31, 2019

Submit your manuscripts to the ECS Journal of Solid State Science and Technology (JSS) Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki.

About Isamu Akasaki

Isamu Akasaki has devoted much of his research career to the development and advancement of efficient GaN light-emitting diodes via a metalorganic vapor phase epitaxy growth process. This approach led to the discovery of p-type GaN with magnesium doping and ultimately to the invention of the first GaN p-n junction blue/ultraviolet LED in 1989. Subsequent work by Akasaki’s group led to advances in conductivity control of n-type GaN and related alloys by doping with silicon, allowing for the use of hetero structures and quantum wells in the design and fabrication of even more efficient p-n junction structures and the development of wide bandgap III-Nitride semiconductors for solid state lighting and related technologies. These groundbreaking efforts were recognized in 2014 with the Nobel Prize in Physics. (more…)