Topic Close-up #12
Symposium G02: Atomic Layer Deposition Applications 16
Symposium focus: This symposium contains cutting edge research results on applications in Atomic Layer Processing and will focus on a variety of applications of ALD and other atomic layer-by-layer processing (like etching and cleaning). The organizers would like to invite contributions to the following topics:
- Semiconductor CMOS applications: development and integration of ALD high-k oxides and metal electrodes with conventional and high-mobility channel materials;
- Volatile and non-volatile memory applications: extendibility, Flash, MIM, MIS, RF capacitors, etc.;
- Interconnects and contacts: integration of ALD films with Cu and low-k materials;
- Fundamentals of ALD processing: reaction mechanisms, in-situ measurement, modeling, theory;
- New precursors and delivery systems;
- Optical and photonic applications;
- Coating of nanoporous materials by ALD;
- MLD and hybrid ALD/MLD;
- ALD for energy conversion applications such as fuel cells, photovoltaics, etc.;
- ALD for energy storage applications;
- Productivity enhancement, scale-up, and commercialization of ALD equipment and processes for rigid and flexible substrates, including roll-to-roll deposition;
- Area-selective ALD;
- Atomic Layer Etching (‘reverse ALD’) and related topics aiming at self-limited etching, such as atomic layer cleaning, etc.
Confirmed invited speakers:
- Area-selective ALD processes for dielectrics, Sumit Agarwal, Colorado School of Mines, USA
- Reactions on metal surface and diketone induced by gas cluster ions during Atomic Layer Etching, Noriaki Toyoda, Hyogo University, Japan
- Molecular Layer Etching, Jeffrey Elam, Argonne National Laboratory, USA
- Ga2O3 phase control and heterojunctions using PE-ALEpitaxy, Virginia Wheeler, US Naval Research Labs, USA
- ALD for battery technologies, Arrelaine Dameron, Forge Nano, USA
- ALD materials for solar fuels, Paul McIntyre, Stanford University, USA
- Investigations into molecular layer deposition of conjugated amine polymers, Matthias Young, Univ. of Missouri, Columbia, USA
- Functional Metal Oxides in Perovskite Solar Cells, Yu Duan, Jilin University, Changchun, China
- In-situ and combinatorial techniques for spatial ALD, Kevin Musselman, University of Waterloo, Canada
- Benefits of Spatial ALD compared to batch and single-wafer ALD methods, David Omeara, TEL Technology Center, America, USA
- Surface thermolysis of ALD precursors and its implications for deposition, Xinwei Wang, Peking University, China
- Recent developments in Materials characterization for the CMOS industry, Paul van der Heide, Imec, Belgium
- MLD of metal-organic thin films with tuneable conductance for neuromorphic computing applications, Mikko Nisula, University of Ghent, Belgium
- ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices, Karl A. Littau, Intermolecular-EMD Group, USA
- Coatings of (TiO2) Nanotube Layers, Jan Macak, University of Pardubice, Czech Republic
- Recent development of various In-precursors and InOx related oxide semiconductor TFTs via ALD, Jin-Seong Park, Han Yang University, Korea
Deadline for submitting abstracts:
May 29, 2020
