To recognize the innovative research gaining attention across the diverse span of its topical interest areas, the Society highlights the top five most-read journal articles in each area during each quarter of the year.
The most-read ECS Journal of Solid State Science and Technology articles by topical interest area during the second quarter of 2019 (April through June) are listed below.
Highlights are based on articles published since January 1, 2017.
Articles marked OA are open access.
Carbon Nanostructures and Devices
- Review—The Beautiful Molecule: 30 Years of C60 and Its Derivatives | Steve F. A. Acquah, Anastasia V. Penkova, Denis A. Markelov, Anna S. Semisalova, Branden E. Leonhardt, and James M. Magi | OA
- Facile Synthesis and Characterization of Reduced Graphene Oxide Produced with Green and Conventional Reductants | Nada Sami Ahmed, Orchidah Azizi, Arik El-Boher, John Gahl, and Sangho Bok | OA
- Graphene Oxide from Improved Hummers’ Method: Is This Material Suitable for Reproducible Electrochemical (Bio)Sensing? | Karel Lacina, Ondřej Kubesa, Veronika Horáčková, Zdeněk Moravec, Jan Kuta, Petr Vanýsek, and Petr Skládal
- Review—Critical Considerations of High Quality Graphene Synthesized by Plasma-Enhanced Chemical Vapor Deposition for Electronic and Energy Storage Devices | Mohd Asyadi Azam, Nor Najihah Zulkapli, Norasimah Dorah, Raja Noor Amalina Raja Seman, Mohd Hanafi Ani, Mohd Shukri Sirat, Edhuan Ismail, Fatin Bazilah Fauzi, Mohd Ambri Mohamed, and Burhanuddin Yeop Majlis | OA
- A Sensor Based on Au Nanoparticles/Carbon Nitride/Graphene Composites for the Detection of Chloramphenicol and Ciprofloxacin | Yuehuan Yuan, Feifei Zhang, Haiyan Wang, Linna Gao, and Zonghua Wang | OA
Dielectric Science and Materials
- Capacitance Stability in Polymer Tantalum Capacitors with PEDOT Counter Electrodes | Y. Freeman, I. Luzinov, R. Burtovyy, P. Lessner, W. R. Harrell, S. Chinnam, and J. Qazi | OA
- Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride | John T. Gaskins, Patrick E. Hopkins, Devin R. Merrill, Sage R. Bauers, Erik Hadland, David C. Johnson, Donghyi Koh, Jung Hwan Yum, Sanjay Banerjee, Bradley J. Nordell, Michelle M. Paquette, Anthony N. Caruso, William A. Lanford, Patrick Henry, Liza Ross, Han Li, Liyi Li, Marc French, Antonio M. Rudolph, and Sean W. King | OA
- Review—Organic Materials for Thermoelectric Energy Generation | Lewis M. Cowen, Jonathan Atoyo, Matthew J. Carnie, Derya Baran, and Bob C. Schroeder | OA
- Editors’ Choice—Control of Si3N4 Etching Kinetics and Selectivity to SiO2by the Additives in Superheated Water | Changjin Son and Sangwoo Lim | OA
- Review—Micro and Nano-Engineering Enabled New Generation of Thermoelectric Generator Devices and Applications | Jhonathan P. Rojas, Devendra Singh, Salman B. Inayat, Galo A. Torres Sevilla, Hossain M. Fahad, and Muhammad M. Hussain | OA
Electronic Materials and Processing
- Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications | Alain E. Kaloyeros, Fernando A. Jové, Jonathan Goff, and Barry Arkles | OA
- Perspective—Opportunities and Future Directions for Ga2O3 | Michael A. Mastro, Akito Kuramata, Jacob Calkins, Jihyun Kim, Fan Ren, and S. J. Pearton | OA
- Post Cleaning for FEOL CMP with Silica and Ceria Slurries | Wei-Tsu Tseng, Changhong Wu, Tim McCormack, and Ji Chul Yang | OA
- Formation of Cobalt-BTA Complexes and Their Removal from Various Surfaces Relevant to Cobalt Interconnect Applications | Jihoon Seo, S. S. R. K. Hanup Vegi, C. K. Ranaweera, N. K. Baradanahalli, Ja-Hyung Han, Dinesh Koli, and S. V. Babu | OA
- Enhanced Open Innovation: CMP Innovation to Open New Paradigm | Manabu Tsujimura | OA
Electronic and Photonic Devices and Systems
- Review—Field-Effect Transistor Biosensing: Devices and Clinical Applications | Yu-Cheng Syu, Wei-En Hsu, and Chih-Ting Lin | OA
- Editors’ Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 | Marko J. Tadjer, John L. Lyons, Neeraj Nepal, Jaime A. Freitas, Jr., Andrew D. Koehler, and Geoffrey M. Foster | OA
- Modeling and Analysis of Gallium Oxide Vertical Transistors | Ramchandra Kotecha, Wyatt Metzger, Barry Mather, Sreekant Narumanchi, and Andriy Zakutayev | OA
- Review—RF Sputtered Films of Ga2O3 | Ashwin Kumar Saikumar, Shraddha Dhanraj Nehate, and Kalpathy B Sundaram | OA
- Electronic Properties of Ga2O3 Polymorphs | John L. Lyons | OA
Luminescence and Display Materials, Devices, and Processing
- Review—Phosphor Plates for High-Power LED Applications: Challenges and Opportunities toward Perfect Lighting | Yoon Hwa Kim, Noolu S. M. Viswanath, Sanjith Unithrattil, Ha Jun Kim, and Won Bin Im | OA
- Review—Synthesis, Luminescent Properties, and Stabilities of Cesium Lead Halide Perovskite Nanocrystals | Yoshiki Iso and Tetsuhiko Isobe | OA
- Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities | Julius L. Leaño, Jr., Mu-Huai Fang, and Ru-Shi Liu | OA
- Review—Light Emission from Thin Film Solar Cell Materials: An Emerging Infrared and Visible Light Emitter | Yoshihiko Kanemitsu, Makoto Okano, Le Quang Phuong, and Yasuhiro Yamada | OA
- Critical Review—Narrow-Band Nitride Phosphors for Wide Color-Gamut White LED Backlighting | Shuxing Li, Rong-Jun Xie, Takashi Takeda, and Naoto Hirosaki | OA
Cross Disciplinary
- Simulation of Deep-Level Trap Distributions in AlGaN/GaN HEMTs and Its Influence on Transient Analysis of Drain Current | S. Mukherjee, E. E. Patrick, and M. E. Law | OA
- Device Characteristics of AlGaN/GaN HEMTs with p-GaN Cap Layer | Chih-Hao Li, Yan-Cheng Jiang, Hsin-Chang Tsai, Yi-Nan Zhong, and Yue-ming Hsin | OA
- Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate | S. J. Duffy, B. Benbakhti, M. Mattalah, W. Zhang, M. Bouchilaoun, M. Boucherta, K. Kalna, N. Bourzgui, H. Maher, and A. Soltani | OA
- Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates | Chien-Fong Lo, Chen-Kai Kao, Oleg Laboutin, Hugues Marchand, Rodney Pelzel, and Wayne Johnson | OA
- Simulation of Gate Leakage Current of AlGaN/GaN HEMTs: Effects of the Gate Edges and Self-Heating | Ashu Wang, Lingyan Zeng, and Wen Wang | OA
