Tired of your electronics running out of memory? Rice University’s James Tour and his group of researchers have developed a solid state memory technology that allows for high-density storage while requiring 100 times less energy than traditional designs to operate.

The memory technology has been developed via tantalum oxide, a common insulator in electronics.

This from Futurity:

The discovery by the Rice University lab of chemist James Tour could allow for crossbar array memories that store up to 162 gigabits, much higher than other oxide-based memory systems under investigation by scientists. (Eight bits equal one byte; a 162-gigabit unit would store about 20 gigabytes of information.)

Read the full release here.

James Tour—a past ECS lecturer and pioneer in molecular electronics— and his group at Rice University’s Smalley Institute of Nanoscale Science & Technology are constantly demonstrating the interdisciplinary nature of nano science, and this is no exception. From the development of flexible supercapacitors to using cobalt films for clean fuel production, Tour and his lab are exploring many practical applications where chemistry and nano science intersect.

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Using a desktop computer, scientists can query the model about the thermodynamic properties needed to create the desired catalysts. They can use those parameters to inform experimentalists in their synthetic work.
Image: Accounts of Chemical Research

We’re one step closer to transitioning renewable energy sources from intermittent to sustainable with this new development from Pacific Northwest National Laboratory.

Scientists are eliminating all of the unnecessary detours when dealing with molecular catalysts by elaborating on a strategy to map the catalytic route. With this strategy, researchers can modify just one part of a catalyst and see how that affects everything – including all the side reactions.

“We now know how catalysts with desired properties will behave in a given circumstance before we ever leave the computer. By working backwards, we can even ask which catalysts are the best performers for a set of conditions. We are on the verge of designing molecular electrocatalysts in silico — or conducting research by means of computer modeling,” said study co-leader, Dr. Simone Raugei.

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Researchers have created the first transistor out of silicene, the world’s thinnest silicon material.
Image: University of Texas at Austin

There’s an exciting new development in the world of single-atom thick materials, and surprisingly it doesn’t revolve around graphene.

Instead, scientist have shifted their attention to silicene: an exotic form of silicon that has fantastic electrical properties for computer chips.

Like graphene, silicene is a single-atom thick material that allows electrons to flow through it at amazingly high speeds. However, silicene does not occur naturally like graphene – it instead has to be grown in the lab on a sheet of silver.

Because of the difficulty encountered when attempting to produce silicene, its properties have only been theoretical until now. Recently, Deji Akinwande of the University of Texas at Austin turned his attention to this material and found a way to make a transistor out of silicene.

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