Focus Issue on Gallium Oxide Based Materials and Devices II

ECS Journal of Solid State Science and Technology
Focus Issue on Gallium Oxide Based Materials and Devices II

This issue of ECS Journal of Solid State Science and Technology is the second in a series that aims to cover the growth, characterization, processing, and device applications of Ga₂O₃. GaN and SiC based wide bandgap device technologies have matured and become limited by fundamental material properties. A new class of oxide wide band gap materials is emerging (gallium oxide and aluminum gallium oxide) that offers potentially improved figure of merit over GaN and SiC for power devices. The availability of Ga₂O₃ single crystals and epitaxial films with large area and excellent quality has led to renewed interest in this ultra-wide bandgap semiconductor for solar-blind photodetectors, sensors, and power electronics. Topics of interest include, but are not limited, to the following:

• Bulk crystal growth
• Epitaxy and thin film deposition
• Binary and ternary alloys involving Al and In and their miscibility
• Properties of different polytypes
• Heterostructures with p-type oxides
• Doping and defects
• Characterization of electrical, transport, thermal, optical, and structural properties
• Ohmic and Schottky contacts
• Processing, including etching and polishing, ion implantation, annealing
• Heat dissipation and thermal management
• Electronic and opto-electronic devices, power devices, sensors, energy harvesting devices
• Modelling and simulation of devices and properties