AiMES 2018 Topic Close-Up: Materials, Formulation, and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and High Density Interconnection PCB

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March 16, 2018
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Speaker at ECS meetingTopic Close-up #6

Symposium G05: Materials, Formulation, and Processes for Semiconductor, 2.5 and 3D Chip Packaging, and High Density Interconnection PCB

Symposium Focus: This symposium focuses on issues pertinent to advances in semiconductor interconnects beyond the 20 nm technology node as well as novel materials and integration methods for 2.5D and 3D interconnects. An emerging technology or device architecture called 2.5D and 3D integration is based on the system performance gains that is achieved by chip stacking and vertically interconnecting distinct device layers. Since electrochemical processes are the ultimate solution to create smaller size and lower cost devices, both practical and fundamental aspects of electrochemical processes are of high demand. Ideally, this symposium will bring researchers together to discuss various aspects of device architecture, novel materials, chemical formulation, packaging approaches and nano-scale fabrication methodologies.

Featured Invited Speakers: Include Professor Arai, Shinsu University, Japan, “Dispersive electrodeposition”; Prof. N. Dimitrov, SUNY at Binghamtonm, USA, “TSV, TGV Filling Plating”; Prof. Ming Li, Shanghai Jiao Tong University, China, “TSV Filling Plating and simulation”; Dr. Ravi Pokhrel, Dow Chemical, USA, “Additives for Cu ED”; Prof. T. Suga, The University of Tokyo, Japan, “Low Temperature Bonding”; Prof. Qiang Huang, University of Alabama, USA, “Cu, Co, alloy electrodeposition”.

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