Check out what’s trending in electrochemical and solid state science and technology! Read some of the most exciting and innovative papers that have been recently published in ECS’s journals.
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Towards Implantable Bio-Supercapacitors: Pseudocapacitance of Ruthenium Oxide Nanoparticles and Nanosheets in Acids, Buffered Solutions, and Bioelectrolyte
Since the early 1990s when ruthenium oxide-based electrode materials were found to have pseudocapacitive properties, they have been extensively investigated as promising supercapacitor electrodes. A best benchmark example is RuO2·nH2O in combination with H2SO4 as the electrolyte, being able to operate with high voltage window, high capacitance and long cycle life. Read the rest.
Influence of the Altered Surface Layer on the Corrosion of AA5083
Aluminum alloys are increasingly replacing heavier materials in transportation, military and other applications, oftentimes in environments demanding of exceptional corrosion performance. In this regard, AA5083 has served as one of the alloys of choice for marine applications. Read the rest.
Advances in 3D Printing of Functional Nanomaterials
The intense and widespread interest in additive manufacturing techniques, including 3D printing, has resulted in an approximately $5 billion industry today with projections for growth to $15-20 billion by 2018. The commercial availability of 3D printing equipment, and the development of flexible additive manufacturing platforms in R&D laboratories, has provided a foundation for researchers to perform fundamental research in the materials science and engineering of polymers, organic materials, ceramics, inks, pastes, and other materials. Read the rest.
A Critical Assessment of XH2O2as a Figure of Merit for Oxygen Reduction Electrocatalysts in Aqueous Electrolytes
In the assessment of electrocatalysts for the oxygen reduction reaction (ORR), the XH2O2 figure of merit is commonly determined. This XH2O2 parameter is the fraction of disk current in a rotating ring-disk electrode (RRDE) experiment attributable to hydrogen peroxide generated and subsequently lost to solution. Read the rest.
Self-Aligned Fin-On-Oxide FinFETs on Si Substrates
Bulk-silicon (Si) FinFETs have become recognized as one of the most promising device architectures for advanced CMOS integration circuits. FinFETs are well known to have a controlled electrostatic integrity even with short channel lengths, and can be multi-gated. Read the rest.
Tech Highlights was prepared by Mike Kelly, Sandia National Laboratories; Eric Schindelholz, Sandia National Laboratories; Zenghe Liu, Google Inc.; Colm O’Dwyer, University College Cork, Ireland; and Donald Pile, Nexeon Limited. This issue of Tech Highlights was published in the fall issue of Interface.
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